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Carbon nanotube based devices for terahertz applications

Fedorov, Georgy (Moscow Institute for physics and Technology, Dolgoprudny, RUS); Gayduchenko, Igor (Moscow State Pedagogical University, Moscow, RUS); Goltsman, Gregory (Moscow State Pedagogical University, Moscow, RUS)

Increased sensitivity of detection of terahertz (THz) signals can be achieved by reducing the size of the sensitive element. Therefore, it is expected that recent advances in nanotechnology may result in cost-effective solutions for new THz detectors. One particular route is the use of carbon nanotubes (CNTs) that can be easily synthesized in a chemical vapor deposition (CVD) system using inexpensive precursors for the growth. This talk will be devoted to the prospects of using asymmetric CNT devices as a basic element of THz detectors. We studied response of such devices to terahertz radiation [1, 2]. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. The asymmetry which is crucial for the observation of the DC voltage response to the radiation has been implemented in our devices in different ways. In most cases different metals are used to contact the CNT network of a uniform morphology at the source and drain electrodes. Such devices show the most promising results with room temperature resposnivity of up to 100V/W. Analysis of the experimental data shows that the response contains two components. One is thermal reflecting different increase in temperature in the areas of the nanotube/metal interfaces. The second is a response due to the non-linearity of the current-voltage characteristic of the device at zero bias. The rectification of the signal leads to a DC component, which contributes to the observed signals. This work was supported by the Grant of Ministry of Education and Science of Russian Federation under Contract No. 14.586.21.0003 (project ID RFMEFI58614X0003).

[1] G. Fedorov, A. Kardakova, I. Gayduchenko, I. Charayev, B. M. Voronov, M. Finkel, T. M. Klapwijk, S. Morozov, M. Presniakov, I. Bobrinetskiy, R. Ibragimov and G. Goltsman, Appl. Phys. Lett. 103 , 181121 (2013)

[2] I. Gayduchenko, A. Kardakova, G. Fedorov, B. Voronov, M. Finkel, D. Jimenez, S. Morozov, M. Presniakov, and G. N. Goltsman, J. Appl. Phys . 118, 194303 (2015). 

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