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Selective growth of semiconducting and metallic single-wall carbon nanotubes

Liu, Chang, (Shenyang National Laboratory of Materials Science, Institute of Metal Research, Chinese Academy of Scinces, Shenyang, China)

Single-wall carbon nanotubes (SWCNTs) can be either semiconducting or metallic, depending on their diameters and chiral angles. Semiconducting SWCNTs (sSWCNTs) are potential channel material of high-performance field effect transistors with advantages of high carrier mobility and excellent flexibility; metallic SWCNTs can be usded as interconectors in circuits. Usually, as-prepared SWCNTs are a mixture of s- and m-SWCNTs. Therefore, it is highly important to prepare pure SWCNTs with uniform electrical types to achieve their use in electronics. In this presentation, we report the direct growth of high-quality s- and m-SWCNTs by a floating catalyst chemical vapor deposition (FCCVD) method and by novel catalyst design. We introduce suitable amount of oxygen or hydrogen as etchant during the growth of SWCNTs by the FCCVD method. As a result, SWCNTs with higher chemical reactivity are selectively removed, and enriched s- and mSWCNTs are obtained in large scale. On the other hand, we design and prepared novel catalyst with superior stability compared to traditional transition metals, and obtained SWCNTs with a narrow band gap distribution.

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[4] B. Yu, C. Liu, P. X. Hou et al. JACS 2011, 133: 5232.

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